MJE200G (NPN), MJE210G (PNP)
Complementary Silicon Power Plastic Transistors
These devices are designed for low
voltage, low−power, high−gain audio amplifier applications.
Features
• High DC Current Gain • Low Collector−Emitter Saturation
Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage Collector−Base
Voltage Emitter−Base
Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB PD
40 Vdc 25 Vdc 8.
0 Vdc 5.
0 Adc 10 Adc 1.
0 Adc
15 W 0.
1...