isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining
Voltage-
: VCEO(SUS) = 300 V(Min) ·DC Current Gain-
: hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation
Voltage-
: VCE(sat) = 1.
0V(Max.
)@ IC= 50mA ·Complement to the PNP MJE350 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNI...