isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-
voltage ,high-speed, power switching in
inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter
Voltage
850
V
VCEO(SUS) Collector-Emitter
Voltage
450
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
...