POWER MOSFET
MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω Major Ratings and Characteristics Characteristics Values Units ID 2.0 A IDM 8.0 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability wit...
Global Semiconductor