MJIRF6N70
ID = 6A VDS = 700V RDS(on)MAX = 1.
65Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 6.
0 A IDM 24 A VDS 700 V
VGS TJ T storage
±30 150 -55 ~150
V
℃ ℃
POWER
MOSFET
Description/ Features The MJIRF6N70 is used an advanced termination scheme to provide enhanced
voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant
Case Styles
Ordering Information Part ...