Chip Integration Technology Corporation
MJU07N60CT
600V Super Junction Power
MOSFET
■ Features
• High speed power switching • 100% UIS tested, 100% Rg tested • Εnhanced avalanche ruggedness • Lead free, halogen free
■ Application
• SMPS • Ηard switching and high speed circuit • LED lighting • Flyback
■ Main product characteristics
VDS RDS(on),max ID
600V 580mΩ
7A
■ Pin Description TO-251
Preliminary
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Continuous Drain Current
TC = 25OC
Drain to Source
Voltage
Gate to Source
Voltage
Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Temperature
L =4.
0mH...