Freescale Semiconductor Technical Data
Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications.
It
is suitable for applications with frequencies from 1800 to 2200 MHz such as
CDMA, TD--SCDMA, PCS, UMTS and LTE at operating
voltages from 3 to 5 V.
The amplifier is housed in a cost--effective, surface mount QFN plastic package.
Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm
Frequency
Gps (dB)
ACPR (dBc)
PAE (%)
Te...