Silicon Epitaxial Planar Switching Diode
MMBD2835, MMBD2836
Features • Small package • Low forward
voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse
Voltage
Forward Current Power Dissipation Junction Temperature Storage Temperature Range
3
12
Marking Code: A1 SOT-23 Plastic Package
MMBD2835 MMBD2836
Symbol
VR
IF Ptot Tj Tstg
Value
35 75 100 350 150 - 55 to + 150
Unit
V
mA mW OC OC
Characteristics at Ta = 25 OC Parameter
Forward
Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA
Reverse Current at VR = 30 V at VR = 50 V
Reverse Breakdown
Voltage at IR = 100 µA
D...