MMBF170LT1 Power
MOSFET 500 mA, 60 V
N−Channel SOT−23
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Drain−Source
Voltage Drain−Gate
Voltage Gate−Source
Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.
5 0.
8 Unit Vdc Vdc Vdc Vpk Adc 1 Unit
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500 mA, 60 V RDS(on) = 5 W
N−Channel 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1.
) TA = 25°C Derate above 25°C
com
Symbol PD
Max 225 1.
8
2 mW mW/°C °C/W °C
1 2 3
Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1.
FR−5 = 1.
0 0.
75 0.
062...