MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF4391LT1/D
JFET Switching Transistors
N–Channel
2 SOURCE 3 GATE
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
3 1
1 DRAIN
MAXIMUM RATINGS
Rating Drain–Source
Voltage Drain–Gate
Voltage Gate–Source
Voltage Forward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBF4391LT1 = 6J; MMBF4392LT...