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MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Drain−Gate
Voltage Reverse Gate−Source
Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.
8 Tstg −65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc
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2 SOURCE
3 GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.
8 RqJA TJ, Tstg 556 −55 to +150 mW mW...