MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise small–signal
amplifiers for operation up to 2.
5 GHz.
Also usable in applications requiring fast switching times.
• High Current–Gain — Bandwidth Product
• Low Noise Figure @ f = 1.
0 GHz — NF(matched) = 1.
8 dB (Typ) (MRF9011LT1) NF(matched) = 1.
9 dB (Typ) (MMBR901LT1, T3)
• High Power Gain — Gpe(matched) = 13.
5 dB (Typ) @ f = 1.
0 GHz (MRF9011LT1) Gpe(matched) = 12.
0 dB (Typ) @ f = 1.
0 GHz (MMBR901LT1, T3)
• Guaranteed RF Parameters (MRF9011LT1)
• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Pack...