INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR951L
DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product
APPLICATIONS ·Designed for use in high gain , low noise small-signal
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
20 V
VCEO Collector-Emitter
Voltage
10 V
VEBO
Emitter-Base
Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.
5 V
100 mA
0.
322
W
150 ℃
-55~150
℃
isc website：www.
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1
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR951...