MMBTA94T

MMBTA94 : REPLACEMENT TYPE : MMBTA94 FEATURES  High Breakdown Voltage  Complement to HABTA44 (NPN) HABTA94(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -200 mA Collector Power Dissipation PC 350 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 MARKING:4D 1: BASE 2：EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=-100µA , IE=0 Coll.

MMBTA94 : MMBTA94 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features ,。 High voltage, low saturation voltage.  / Applications 。 High voltage control circuit.  / Equivalent Circuit / Pinning 3 2 1 PIN 1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Range Marking 80～300 H4D http://www.fsbrec.com 1/6 MMBTA94 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHE.

MMBTA94 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Surface Mount SOT-23 Package • Capable of 350mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: 4D Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IC Collector-Emitter Breakdown Voltage* (IC=-1.0mAdc, IB=0) Collector-Base Breakdown Voltage (IC=-100µAdc, IE=0) Emitter-Base Bre.

MMBTA94 : MMBTA94 PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBTA44 is recommended. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (T a = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SOT-23 Plastic Package Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 400 400 6 300 200 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (4.