MMBTSB1690
PNP Silicon Epitaxial Planar Transistors
for low frequency amplifier and driver applications
com
SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot TJ Ts
Value 15 12 6 2 4
1)
Unit V V V A A mW
O
200 150 -55 to +150
C C
O
Single pulse, Pw = 1 ms.
Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 200 mA Collector Base Breakdown
Voltage at -IC = 10 µA Collector Emitter Breakdown
Voltage at -IC = 1 mA Emitter Base Break...