MMBTSC3875
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TStg
Value 60 50 5 150 30 200 150
-55 to +150
Unit V V V mA mA
mW OC OC
Dated : 20/10/2005
MMBTSC3875
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=6V, IC=2mA
Current Gain Group O
hFE
70
-
140...