MMD80R900P Datasheet
MMD80R900P
800V 0.
9Ω N-channel
MOSFET
Description
MMD80R900P is power
MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.
It will provide much high efficiency by using optimized charge coupling technology.
These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 850 0.
9
3 6 17.
6
Unit V Ω V A nC
Package & Internal Circuit D
G DS
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
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