MMP65R190P Datasheet
MMP65R190P
650V 0.
19Ω N-channel
MOSFET
Description
MMP65R190P is power
MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.
It will provide much high efficiency by using optimized charge coupling technology.
These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Package & Internal Circuit
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 700 0.
19
3 20 53
Features
Unit V Ω V A nC
GDS
D G
S
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package – Pb Free Plating, Halogen Fre...