| Part Number | MMUN2131L |
| Manufacturer | ON Semiconductor |
| Title | Digital Transistors |
| Description | MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW PNP Transistors with Monolithic B... |
| Features |
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant M... |
| File Size | 101.96KB |
| Datasheet |
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MMUN2131LT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMUN2111LT1/D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power su.
MMUN2131 : MMUN2111…MMUN2134 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Resistor Values Type MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134 R1 (K) 10 22 47 10 10 4.7 1 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1 2.2 4.7 47 47 SOT-23 Plastic Package Base (Input) R1 R2 Collector (Output) Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -IC Ptot Tj TS Value 50 50 100 200 150 - 55 to + 150 Unit V V mA mW OC OC SEMT.