Part Number
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MP4209 |
Manufacturer
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Toshiba Semiconductor |
Description
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N CHANNEL MOS TYPE HIGH POER / HIGH SPEED SWITCHING APPLICATIONS |
Published
|
Mar 20, 2006 |
Detailed Description
|
MP4209
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4209
High Power, High Speed Sw...
|
Datasheet
|
MP4209
|
Overview
MP4209
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4209
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
• • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.
28 Ω (typ.
) High forward transfer admittance: |Yfs| = 3.
5 S (typ.
) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm
Maximum Ratings (Ta = 25°C)
Characterist...
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