MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Darlington Transistor
NPN Silicon
14 13 12 11 10 9 8 NPN
1234567
MPQ6426
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous
Total Device Dissipation @ TA = 25°C(1) Derate above 25°C
VCEO VCBO VEBO
IC
PD
30
40
12
500
Each Die
Four Die Equal Power
500 900 4.
0 7.
2
Vdc Vdc Vdc mAdc
mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
825
2400
mW
6.
7 19.
2 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to Case
Junction to Ambient
Unit
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