SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF136/D
The RF
MOSFET Line
RF Power Field-Effect Transistors
MRF136
N-Channel Enhancement-Mode
MOSFET
Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
• Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain = 16 dB (Typ) Efficiency = 60% (Typical) • Small–Signal and Large–Signal Characterization • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Excellent Thermal Stability, Ideally Suited For Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques
G S D 15 W, to 400 MHz N–CHANNEL MOS BROADB...