( DataSheet : com )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF157/D
The RF Power MOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz.
• Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ)
MRF157
600 W, to 80 MHz MOS LINEAR RF POWER FET
D
G
S CASE 368–03, STYLE 2
MAXIMUM RATINGS
Rating Drain–Source
Voltage Drain–Gate
Voltage Gate–Source
Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg...