MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron
MOSFET Line
com
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1.
9 to 2.
0 GHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.
75 MHz, f2 = 1961.
25 MHz IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.
2288 MHz Channel Bandwidth Carrier.
Adjacent Channels Measured over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz.
Distortion Products Measured over 1.
2288 MHz Bandwi...