NXP Semiconductors Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral
MOSFET
This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
Its unmatched input and output design allows for wide frequency range use from 1.
8 to 500 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD (%)
27 81.
36 (1) 87.
5–108 (2,3) 230 (4)
CW CW CW Pulse (100 µsec, 20% Duty Cycle)
1550 CW 1400 CW 1475 CW 1500 Peak
25.
9 23.
0 23.
3 23.
7
78.
3 75.
0 83.
4 74.
0
Load Mismatch/Ruggedness
Frequen...