ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz.
Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
• Specified Two--Tone Performance @ 1930 MHz, 26 Volts
Output Power — 4 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — --29 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large--...