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Freescale Semiconductor Technical Data
Document Number: MRF282 Rev.
15, 5/2006
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
• Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.
5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc
• Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.
5 dB Efficiency — 35%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, ...