HG Semiconductors MRF475HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF475 is Designed for 13.
6 V FM Large-Signal Amplifier Applications to 30 MHz.
MAXIMUM RATINGS IC 4.
0 A VCE 18 V VCB 48 V PDISS 10 W @ TC = 25 °C TSTG -65 °C to +150 °C TJ -65 °C to +150 °C θJC 12.
5 °C/W PACKAGE STYLE TO-220AB (COMMON EMITTER) 1 = BASE 2 = COLLECTOR 3 = EMITTER TAB = COLLECTOR CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 20 mA BVCES IC = 50 mA BVEBO IE = 5.
0 mA ICBO VCB = 25 V hFE VCE = 5.
0 V IC = 500 mA Cob VCB = 13.
6 V f = 1.
0 MHz GPE η IMD VCC = 13.
6 V f1 = 30 MHz ICQ = 20 mA Pout = 12 W (PEP) f2 = 30.
001 MHz...

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