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MRF544
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.
5 dB (typ) @ f = 200 MHz High Collector Base Breakdown
Voltage - BVCBO = 100 V (min) High FT - 1400 MHz
1.
Emitter 2.
Base 3.
Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter
Voltage...