Freescale Semiconductor Technical Data
Document Number: MRF5S19150H Rev.
2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
www.
datasheet4u.
com • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1400 mA, Avg.
, Pout = 32 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 2.
5 MHz Offset — - 36.
5 dBc in 1.
2288 MHz Bandw...