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Freescale Semiconductor Technical Data
Document Number: MRF6S24140H Rev.
0, 3/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed primarily for large - signal output applications at 2450 MHz.
Device is suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain — 13.
2 dB Drain Efficiency — 45% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 3...