RF Power Field Effect Transistors
Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier app...
Freescale Semiconductor