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Freescale Semiconductor Technical Data
Replaced by MRF6S9060NR1/NBR1.
There are no form, fit or function changes with this part replacement.
N suffix added to part number to indicate transition to lead - free terminations.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
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