Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev.
1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain — 23.
9 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniqu...