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Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev.
4, 10/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain — 27 dB Drain Efficiency — 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW Output Power Features • Integrated ESD Protection • Greater Negative Gate - Source
Voltage Ra...