Freescale Semiconductor Technical Data
Document Number: MRF6V3090N com Rev.
0, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
Devices are suitable for use in broadcast applications.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg.
, f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 22.
0 dB Drain Efficiency — 28.
5% ACPR @ 4 MHz Offset — --62.
0 dBc @ 4 kHz Bandwidth • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Po...