Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg.
, f = 860 MHz, 8K Mode, 64 QAM Power Gain — 22.
5 dB Drain Efficiency — 28% ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
• Typical Broadband Two--Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout ...