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Document Number: MRF7S18125AH Rev.
0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulations.
GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz.
Power Gain — 17 dB Drain Efficiency — 55% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg.
, Full Frequency Band (1805 - 1880 MHz).
Power Gain — 17 dB Drain Efficie...