MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9030/D
The RF Sub - Micron
MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.
5% IMD — - 32.
5 dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 94...