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Freescale Semiconductor Technical Data
MRF9200L Rev.
1, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment.
• Typical Single−Carrier N−CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg.
, IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwidth = 1.
2288 MHz.
Peak/ Avg.
Ratio = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 17.
5 dB Dr...