|
Part Number
|
MRFG35003M6T1 |
|
Manufacturer
|
Motorola |
|
Description
|
RF Power Field Effect Transistor |
|
Published
|
Dec 4, 2006 |
|
Detailed Description
|
com
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFG3...
|
|
Datasheet
|
MRFG35003M6T1
|
Overview
com
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFG35003M6T1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.
5 GHz WLL/MMDS/BWA or UMTS applications.
Characterized from 0.
5 to 5.
0 GHz.
Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.
55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% • 3 Watts P1dB @ 3.
55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • In Tape and Reel.
T1 S...
Similar Datasheet