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Part Number
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MRFG35003N6T1 |
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Manufacturer
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Freescale Semiconductor |
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Description
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RF Power Field Effect Transistor |
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Published
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Jun 5, 2010 |
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Detailed Description
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Freescale Semiconductor Technical Data
Document Number: MRFG35003N6 Rev. 5, 1/2006
Gallium Arsenide PHEMT
RF Power Fie...
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Datasheet
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MRFG35003N6T1
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Overview
Freescale Semiconductor Technical Data
Document Number: MRFG35003N6 Rev.
5, 1/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.
5 GHz WLL/MMDS/BWA or UMTS applications.
Characterized from 0.
5 to 5.
0 GHz.
Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.
55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% • 3 Watts P1dB @ 3.
55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations.
RoHS Compliant.
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