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1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Devices are unmatched and are suitable for use in Class AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 300 mWatt Power Gain — 11.
5 dB Efficiency — 25% • 3 Watts P1dB @ 3.
55 GHz • Excellent Ph...

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