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com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev.
2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.
5 Watts P1dB @ 3.
55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix ...

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