com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev.
1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg.
, f = 3550 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain —10 dB Drain Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.
84 MHz Channel Bandwidth • 10 Watts P1dB @ 3550 MHz, CW • Excellent Phas...

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