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MS1000
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.
datasheet4u.
com
Features
• • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications.
Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO IC PD Tj T STG
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipati...