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MS1051
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RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS
Features
• • • • • • • 30 MHz 12.
5 VOLTS POUT = 100 WATTS GPE = 12.
0 dB MINIMUM IMD = –30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1051 is a 12.
5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications.
This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VEBO IC PDISS TJ T STG
Parameter
Collector-Base
Voltage Collector-Emitter...