MS75N75
75V N-Channel
MOSFET
Features • RDS(on) (Max 0.
017 Ω )@VGS=10V • Gate Charge (Typical 85nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (175°C) • RoHS compliant package
Packing & Order Information 50/Tube ; 1,000/Box
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source
Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current –Pulsed
VGS Gate-Source
Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Powe...