MSC0311WE
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 30V,ID =11A RDS(ON) 10mΩ @ VGS=10V RDS(ON) 14mΩ @ VGS=4.
5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD proteted
Application
●PWM application ●Load switch
PIN Configuration
Lead Free
Marking and pin assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0311WE
MSC0311WE
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-...