MSC49N60X
40V N-Channel
MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features • 40V,140A, RDS(ON) =2.
8mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • MB / VGA / Vcore • POL Applications • SMPS 2nd SR PPAK5X6 Pin Configuration
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